Rambabu A, Singh Deependra Kumar, Pant Rohit, Nanda K K, Krupanidhi S B
Department of Basic Sciences and Humanities, GMR Institute of Technology, Rajam, Andhra Pradesh, 532127, India.
Quantum Structures and Device Laboratory, Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
Sci Rep. 2020 Sep 3;10(1):14611. doi: 10.1038/s41598-020-71615-5.
Humidity monitoring has become extremely vital in various technological fields such as environment control, biomedical engineering, and so on. Therefore, a substantial interest lies in the development of fast and highly sensitive devices with high figures of merit. Self-powered and ultrasensitive humidity sensors based on SnS nanofilms of different film thicknesses have been demonstrated in this work. The sensing behavior has been investigated in the relative humidity (RH) range of 2-99%. The observed results reveal a remarkable response and ultrafast detection even with zero applied bias (self-powered mode), with response and recovery times of ~ 10 and ~ 0.7 s, respectively. The self-powered behavior has been attributed to the inhomogeneities and the asymmetry in the contact electrodes. The highest sensitivity of ~ 5.64 × 10% can be achieved at an applied bias of 5 V. This approach of fabricating such highly responsive, self-powered and ultrafast sensors with simple device architectures will be useful for designing futuristic sensing devices.
湿度监测在环境控制、生物医学工程等各种技术领域已变得极为重要。因此,人们对开发具有高优值的快速且高灵敏度的器件有着浓厚兴趣。在这项工作中展示了基于不同薄膜厚度的SnS纳米薄膜的自供电超灵敏湿度传感器。已在2 - 99%的相对湿度(RH)范围内研究了其传感行为。观察结果表明,即使在零外加偏压(自供电模式)下也有显著响应和超快检测,响应时间和恢复时间分别约为10秒和0.7秒。自供电行为归因于接触电极中的不均匀性和不对称性。在5 V的外加偏压下可实现高达约5.64×10%的最高灵敏度。这种采用简单器件架构制造此类高响应性、自供电且超快的传感器的方法将有助于设计未来的传感设备。