Ni-Si-B 部分三元薄膜系统的电学和结构性能。
Electrical and Structural Properties of the Partial Ternary Thin-Film System Ni-Si-B.
机构信息
Chair of MEMS Materials, Institute for Materials, Faculty of Mechanical Engineering , Ruhr-University Bochum , Universitaetsstrasse 150 , D-44801 Bochum , Germany.
Nano-Elecronics Materials Unit, International Center for Materials Nanoarchitectonics MANA , National Institute for Materials Science NIMS , 1-1 Namiki Tsukuba , Ibaraki 305-0044 , Japan.
出版信息
ACS Comb Sci. 2019 Apr 8;21(4):310-315. doi: 10.1021/acscombsci.8b00175. Epub 2019 Mar 11.
High-throughput and combinatorial materials science methods were used to investigate the dependence of the work function in the Ni-Si system on the B content (0-30 at. %). Alloying of NiSi is used to adapt its properties to suit the needs as a gate electrode material. Thin-film materials libraries were fabricated and investigated with respect to their structural and electrical properties. Further the work function values of selected samples in the region of interest were analyzed. The results show that the work function can be adjusted between 4.86 eV (B = 4.2 at. %) and 5.16 eV (B = 29.2 at. %) for (NiSi)B .
采用高通量和组合材料科学方法研究了 Ni-Si 体系功函数对 B 含量（0-30 原子%）的依赖关系。合金化 NiSi 用于调整其性能以满足作为栅电极材料的需求。制备了薄膜材料库，并研究了它们的结构和电学性能。进一步分析了感兴趣区域中选定样品的功函数值。结果表明，（NiSi）B 的功函数可以在 4.86 eV（B = 4.2 原子%）和 5.16 eV（B = 29.2 原子%）之间进行调整。
Zotero 插件