Rodenbücher Christian, Menzel Stephan, Wrana Dominik, Gensch Thomas, Korte Carsten, Krok Franciszek, Szot Krzysztof
Forschungszentrum Jülich GmbH, Institute of Energy and Climate Research (IEK-3), 52425, Jülich, Germany.
Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), 52425, Jülich, Germany.
Sci Rep. 2019 Feb 21;9(1):2502. doi: 10.1038/s41598-019-39372-2.
Electroreduction experiments on metal oxides are well established for investigating the nature of the material change in memresistive devices, whose basic working principle is an electrically-induced reduction. While numerous research studies on this topic have been conducted, the influence of extended defects such as dislocations has not been addressed in detail hitherto. Here, we show by employing thermal microscopy to detect local Joule heating effects in the first stage of electroreduction of SrTiO that the current is channelled along extended defects such as dislocations which were introduced mechanically by scratching or sawing. After prolonged degradation, the matrix of the crystal is also electroreduced and the influence of the initially present dislocations diminished. At this stage, a hotspot at the anode develops due to stoichiometry polarisation leading not only to the gliding of existing dislocations, but also to the evolution of new dislocations. Such a formation is caused by electrical and thermal stress showing dislocations may play a significant role in resistive switching effects.
在忆阻器件中,通过金属氧化物的电还原实验来研究材料变化的本质已得到充分确立,忆阻器件的基本工作原理是电诱导还原。尽管已经针对该主题开展了大量研究,但诸如位错等扩展缺陷的影响迄今尚未得到详细探讨。在此,我们通过利用热显微镜检测SrTiO电还原第一阶段的局部焦耳热效应表明,电流沿着诸如通过刮擦或锯切机械引入的位错等扩展缺陷传导。经过长时间降解后,晶体基质也会发生电还原,最初存在的位错的影响减弱。在此阶段,由于化学计量极化,阳极处会形成一个热点,这不仅会导致现有位错的滑移,还会导致新位错的产生。这种形成是由电应力和热应力引起的,表明位错可能在电阻开关效应中发挥重要作用。