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二维过渡金属二硫属化物中的横向异质结构和一维界面

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides.

作者信息

Ávalos-Ovando O, Mastrogiuseppe D, Ulloa S E

机构信息

Department of Physics and Astronomy, and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, OH 45701-2979, United States of America.

出版信息

J Phys Condens Matter. 2019 May 29;31(21):213001. doi: 10.1088/1361-648X/ab0970. Epub 2019 Feb 22.

DOI:10.1088/1361-648X/ab0970
PMID:30794993
Abstract

The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spin-orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX (with M  =  Mo, W and X  =  S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.

摘要

二维(2D)材料的生长和剥落导致在具有不同组成或相的晶体之间的交界处产生边缘和新型界面态。这些混合异质结构(HSs)可以构建为垂直的范德华堆叠,形成二维界面,或者构建为缝合的相邻单层晶体,形成一维(1D)界面。尽管大多数关注都集中在垂直异质结构上,但对一维界面的理论和实验兴趣明显增加。不同二维材料之间的面内界面态继承了两种晶体的特性,产生了具有独特的一维非抛物线色散和强自旋轨道效应的稳健态。具有这些独特特性,这些态为实现一维物理提供了一个令人兴奋的平台。在这里,我们回顾并讨论一维异质结的进展,重点是描述半导体过渡金属二硫属化物MX(M = Mo、W,X = S、Se、Te)之间的异质结的理论方法,以及如何表征和利用界面态。我们还讨论了界面如何依赖于边缘几何形状(如锯齿形和扶手椅形)或应变,因为界面两侧的晶格参数不同,以及这些特征如何影响激子/光学响应。这篇综述旨在作为一种资源,促进这一快速发展领域的理论和实验研究。

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