de Araujo Eduardo Nery Duarte, de Sousa Thiago Alonso Stephan Lacerda, de Moura Guimarães Luciano, Plentz Flavio
Departamento de Física, CCE, Universidade Federal de Viçosa, Viçosa, Minas Gerais, 36570-900, Brasil.
Departamento de Física, ICEx, Universidade Federal de Minas Gerais, C.P. 702, Belo Horizonte, Minas Gerais 30123-970, Brasil.
Beilstein J Nanotechnol. 2019 Feb 5;10:349-355. doi: 10.3762/bjnano.10.34. eCollection 2019.
The large-scale production of high-quality and clean graphene devices, aiming at technological applications, has been a great challenge over the last decade. This is due to the high affinity of graphene with polymers that are usually applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical properties are deteriorated as compared with devices fabricated by conventional production methods.
在过去十年中，旨在实现技术应用的高质量、清洁石墨烯器件的大规模生产一直是一项巨大挑战。这是因为石墨烯与通常用于标准光刻工艺的聚合物具有高亲和力，并且不可避免地会改变石墨烯的电学性质。通过拉曼光谱和电输运研究，我们将石墨烯器件的室温载流子迁移率与石墨烯中有序畴的尺寸相关联。此外，我们表明这些有序畴的尺寸受到光刻后清洗工艺的高度影响。最后，我们表明通过使用聚（二甲基戊二酰亚胺）（PMGI）作为保护层，可以提高化学气相沉积（CVD）石墨烯器件的产量。相反，与通过传统生产方法制造的器件相比，它们的电学性能会变差。
