†Max-Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany.
‡Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands.
ACS Appl Mater Interfaces. 2015 May 13;7(18):9429-35. doi: 10.1021/acsami.5b01869. Epub 2015 May 1.
Chemical vapor deposition (CVD) of graphene on top of metallic foils is a technologically viable method of graphene production. Fabrication of microelectronic devices with CVD grown graphene is commonly done by using photolithography and deposition of metal contacts on top of the transferred graphene layer. This processing is potentially invasive for graphene, yields large spread in device parameters, and can inhibit up-scaling. Here we demonstrate an alternative process technology in which both lithography and contact deposition on top of graphene are prevented. First a prepatterned substrate is fabricated that contains all the device layouts, electrodes and interconnects. Then CVD graphene is transferred on top. Processing parameters are adjusted to yield a graphene layer that adopts the topography of the prepatterned substrate. The metal-graphene contact shows low contact resistances below 1 kΩ μm for CVD graphene devices. The conformal transfer technique is scaled-up to 150 mm wafers with statistically similar devices and with a device yield close to unity.
化学气相沉积（CVD）在金属箔上生长石墨烯是一种可行的石墨烯生产技术。通过使用光刻和在转移的石墨烯层上沉积金属接触，通常可以用 CVD 生长的石墨烯来制造微电子器件。对于石墨烯来说，这种处理方法具有潜在的侵入性，会导致器件参数的广泛分散，并可能阻碍大规模生产。在这里，我们展示了一种替代的工艺技术，其中可以防止在石墨烯顶部进行光刻和接触沉积。首先，制造一个预图案化的衬底，其中包含所有的器件布局、电极和互连。然后将 CVD 石墨烯转移到顶部。调整处理参数以得到一种采用预图案化衬底形貌的石墨烯层。对于 CVD 石墨烯器件，金属-石墨烯接触的接触电阻低于 1 kΩμm。这种保形转移技术可以扩展到 150mm 晶圆上，具有统计上相似的器件和接近 1 的器件产量。
