Pattnaik D P, Beardsley R P, Love C, Cavill S A, Edmonds K W, Rushforth A W
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom.
Department of Physics, University of York, Heslington, York, YO10 5DD, United Kingdom.
Sci Rep. 2019 Feb 28;9(1):3156. doi: 10.1038/s41598-019-39775-1.
The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material for such devices because it possesses biaxial anisotropy and large magnetostriction. Here we experimentally investigate the properties of galfenol/spacer/galfenol structures in which the compositions of the galfenol layers are varied in order to produce different strengths of the magnetic anisotropy and magnetostriction constants. Based upon these layers, we propose and simulate the operation of an information storage device that can operate as an energy efficient multilevel memory cell.
通过压电/铁磁异质结构中的逆磁致伸缩效应利用电压来控制磁化，这为超低能量信息存储技术带来了希望。外延盖芬镍合金（一种铁和镓的合金）已被证明是适用于此类器件的高度合适材料，因为它具有双轴各向异性和大磁致伸缩。在这里，我们通过实验研究盖芬镍合金/间隔层/盖芬镍合金结构的特性，其中盖芬镍合金层的成分不同，以产生不同强度的磁各向异性和磁致伸缩常数。基于这些层，我们提出并模拟了一种可作为节能多级存储单元运行的信息存储设备的运行情况。
