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如何测量斯格明子薄膜多层结构中的局域Dzyaloshinskii-Moriya相互作用。

How to measure the local Dzyaloshinskii-Moriya Interaction in Skyrmion Thin-Film Multilayers.

作者信息

Baćani Mirko, Marioni Miguel A, Schwenk Johannes, Hug Hans J

机构信息

Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600, Dübendorf, Switzerland.

Department of Physics, University of Basel, CH-4056, Basel, Switzerland.

出版信息

Sci Rep. 2019 Feb 28;9(1):3114. doi: 10.1038/s41598-019-39501-x.

Abstract

The current-driven motion of skyrmions in MnSi and FeGe thinned single crystals could be initiated at current densities of the order of 10 A/m, five orders of magnitude smaller than for magnetic domain walls. The technologically crucial step of replicating these results in thin films has not been successful to-date, but the reasons are not clear. Elucidating them requires analyzing system characteristics at scales of few nm where the key Dzyaloshinskii-Moriya (DM) interactions vary, and doing so in near-application conditions, i.e. in systems at room temperature, capped with additional layers for oxidation protection. In this work's magnetic force microscopy (MFM) studies of magnetron-sputtered Ir/Co/Pt-multilayers we show skyrmions that are smaller than previously observed, are not circularly symmetric, and are pinned to 50-nm wide areas where the DM interaction is higher than average. This finding matches our measurement of inhomogeneity of the magnetic moment areal density, which amounts to a standard deviation of the Co layer thickness of 0.3 monolayers in our 0.6 nm thick Co layers. This likely originates in small Co layer thickness variation and alloying. These film characteristics must be controlled with greater precision to preclude skyrmion pinning.

摘要

在MnSi和FeGe薄单晶中,斯格明子的电流驱动运动可在电流密度约为10 A/m时启动,这比磁畴壁的电流密度小五个数量级。迄今为止,在薄膜中复制这些结果这一技术关键步骤尚未成功,但原因尚不清楚。要阐明这些原因,需要在几纳米的尺度上分析系统特性,此时关键的Dzyaloshinskii-Moriya(DM)相互作用会发生变化,并且要在接近应用的条件下进行,即在室温系统中,覆盖额外的层以防止氧化。在这项工作中,我们通过对磁控溅射的Ir/Co/Pt多层膜进行磁力显微镜(MFM)研究,展示了比之前观察到的更小、非圆对称且被钉扎在DM相互作用高于平均水平的50纳米宽区域的斯格明子。这一发现与我们对磁矩面密度不均匀性的测量结果相符 在我们0.6纳米厚的Co层中,Co层厚度的标准偏差为0.3个单层。这可能源于Co层厚度的微小变化和合金化。必须更精确地控制这些薄膜特性,以防止斯格明子被钉扎。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cc1a/6395602/e027e29a3a29/41598_2019_39501_Fig1_HTML.jpg

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