Cubukcu M, Pöllath S, Tacchi S, Stacey A, Darwin E, Freeman C W F, Barton C, Hickey B J, Marrows C H, Carlotti G, Back C H, Kazakova O
National Physical Laboratory, Teddington TW11 0LW, UK.
London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, UK.
Micromachines (Basel). 2022 Nov 4;13(11):1911. doi: 10.3390/mi13111911.
We show that magnetic skyrmions can be stabilised at room temperature in continuous [Ir/Co/Pt] multilayers on SiO/Si substrates without the prior application of electric current or magnetic field. While decreasing the Co thickness, a transition of the magnetic domain patterns from worm-like state to separated stripes is observed. The skyrmions are clearly imaged in both states using magnetic force microscopy. The density of skyrmions can be significantly enhanced after applying the "in-plane field procedure". Our results provide means to manipulate magnetic skyrmion density, further allowing for the optimised engineering of skyrmion-based devices.
我们表明,在SiO/Si衬底上的连续[Ir/Co/Pt]多层膜中,无需预先施加电流或磁场,磁斯格明子就能在室温下稳定存在。在降低Co层厚度时,观察到磁畴图案从蠕虫状状态转变为分离条纹。利用磁力显微镜在两种状态下都能清晰地成像斯格明子。应用“面内场程序”后,斯格明子的密度可显著提高。我们的结果提供了操纵磁斯格明子密度的方法,进一步有助于基于斯格明子的器件的优化设计。