Dittrich Th, Garcia Vera O, Fengler S, Pineda S, Bönisch S
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Si-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany.
Helmholtz-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung, Institut für Werkstoffforschung, Max-Planck-Str. 1, D-21502 Geesthacht, Germany.
Rev Sci Instrum. 2019 Feb;90(2):026102. doi: 10.1063/1.5068749.
The measurement of surface photovoltage (SPV) transients over 12 orders of magnitude in time was recently demonstrated [Rev. Sci. Instrum. 88, 053904 (2017)]. In dedicated experiments, however, a high-impedance buffer shall be placed outside the measurement chamber, which has consequences for SPV measurements at very short times. By varying the LCR circuit of a measurement configuration, applying a multi-parameter fit and simulating the corresponding SPV transients, we show, on the examples of highly doped silicon and a CdS thin film, that the source function of SPV transients can be reconstructed with a resolution time better than 1 ns.
最近已证明能够在12个数量级的时间范围内测量表面光电压（SPV）瞬变[《科学仪器评论》88, 053904 (2017)]。然而，在专门的实验中，高阻抗缓冲器应放置在测量室外部，这对极短时间的SPV测量会产生影响。通过改变测量配置的LCR电路、进行多参数拟合并模拟相应的SPV瞬变，我们以高掺杂硅和硫化镉薄膜为例表明，SPV瞬变的源函数能够以优于1 ns的分辨时间进行重构。
