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超薄硫化镉层表面光电压瞬态的高精度差分测量。

High precision differential measurement of surface photovoltage transients on ultrathin CdS layers.

作者信息

Dittrich Th, Bönisch S, Zabel P, Dube S

机构信息

Helmholtz-Zentrum Berlin fur Materialien und Energie, Berlin, Germany.

出版信息

Rev Sci Instrum. 2008 Nov;79(11):113903. doi: 10.1063/1.3020757.

Abstract

Time-resolved surface photovoltage (SPV) is an important method for studying charge separation, for example, in nanostructured semiconductors. High precision differential measurement of SPV transients was realized with two identical measurement capacitors and high-impedance buffers. In addition, logarithmic readout and averaging procedures were implemented for single transients over eight magnitudes in time. As a model system ultrathin CdS layers were investigated. The thickness dependencies of the SPV amplitudes and that of the dominating relaxation mechanisms are demonstrated and discussed.

摘要

时间分辨表面光电压(SPV)是研究电荷分离的重要方法,例如在纳米结构半导体中。利用两个相同的测量电容器和高阻抗缓冲器实现了对SPV瞬态的高精度差分测量。此外,还针对时间上八个数量级的单个瞬态实施了对数读出和平均程序。作为一个模型系统,对超薄硫化镉层进行了研究。展示并讨论了SPV振幅的厚度依赖性以及主要弛豫机制的厚度依赖性。

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