准二维狄拉克半金属ZrTe纳米线中非平凡态的量子振荡
Quantum Oscillations from Nontrivial States in Quasi-Two-Dimensional Dirac Semimetal ZrTe Nanowires.
作者信息
Yang Pei, Wang Wei, Zhang Xiaoqian, Wang Kejie, He Liang, Liu Wenqing, Xu Yongbing
机构信息
Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
York Nanjing Joint Centre for Spintronics and Nanotechnology, Departments of Electronics, The University of York, York, YO10 5DD, UK.
出版信息
Sci Rep. 2019 Mar 5;9(1):3558. doi: 10.1038/s41598-019-39144-y.
Recently discovered Dirac semimetal ZrTe bulk crystal, exhibits nontrivial conducting states in each individual layer, holding great potential for novel spintronic applications. Here, to reveal the transport properties of ZrTe, we fabricated ZrTe nanowires (NWs) devices, with much larger surface-to-volume ratio than bulk materials. Quantum oscillations induced by the two-dimensional (2D) nontrivial conducting states have been observed from these NWs and a finite Berry phase of π is obtained by the analysis of Landau-level fan diagram. More importantly, the absence of the Aharonov-Bohm (A-B) oscillations, along with the SdH oscillations, suggests that the electrons only conduct inside each layer. And the intralayer conducting is suppressed because of the weak connection between adjacent layers. Our results demonstrate that ZrTe NWs can serve as a suitable quasi-2D Dirac semimetal with high mobility (85000 cmVs) and large nontrivial conductance contribution (up to 8.68%).
最近发现的狄拉克半金属ZrTe体晶体，在每一层中都表现出非平凡的导电态，在新型自旋电子学应用方面具有巨大潜力。在此，为了揭示ZrTe的输运特性，我们制备了ZrTe纳米线（NWs）器件，其表面体积比远大于体材料。从这些NWs中观察到了由二维（2D）非平凡导电态诱导的量子振荡，并且通过对朗道能级扇形图的分析获得了约π的有限贝里相位。更重要的是，阿哈罗诺夫 - 玻姆（A - B）振荡的缺失以及舒布尼科夫 - 德哈斯（SdH）振荡表明电子仅在每一层内传导。并且由于相邻层之间的弱连接，层内导电受到抑制。我们的结果表明，ZrTe NWs可以作为一种合适的准二维狄拉克半金属，具有高迁移率（约85000 cm²V⁻¹s⁻¹）和大的非平凡电导贡献（高达8.68%）。
Zotero 插件