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阐明自组装量子点的光致发光衰减动力学

Clarifying photoluminescence decay dynamics of self-assembled quantum dots.

作者信息

Man Minh Tan, Lee Hong Seok

机构信息

Institute of Theoretical and Applied Research (ITAR), Duy Tan University, Hanoi, 100000, Vietnam.

Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju, 54896, Republic of Korea.

出版信息

Sci Rep. 2019 Mar 15;9(1):4613. doi: 10.1038/s41598-019-41075-7.

Abstract

We studied the temperature-dependent photoluminescence (PL) and time-resolved PL spectra of multilayer CdTe/ZnTe quantum dots (QDs) to understand their carrier dynamics. We demonstrated a method of enhancing the confinement of carriers in CdTe QDs by modulating the number of stacked layers, leading to enhanced acoustic phonons up to 67 μeV and reducing the optical phonon coupling to 20 meV with an average phonon energy of 20 meV. The temperature-dependent decay time could be explained using a simple model of the thermal redistribution of carrier states. Thermal escape from hole states during multiphonon scattering occurred only at high temperatures, whereas blue shifts and enhanced PL intensity were expected to enhance the electron-phonon coupling and confinement-induced mixing among discrete state and continuum states with separation energies of 3.5-7.4 meV. Time-resolved PL measurements probed the electric field screening effect as a function of the strain distribution in QDs and was established to be 2.5 ± 0.2 MV/cm.

摘要

我们研究了多层CdTe/ZnTe量子点(QD)的温度相关光致发光(PL)和时间分辨PL光谱,以了解其载流子动力学。我们展示了一种通过调节堆叠层数来增强CdTe量子点中载流子限制的方法,这导致高达67 μeV的声学声子增强,并且将光学声子耦合降低到20 meV,平均声子能量为20 meV。温度相关的衰减时间可以用载流子态热再分布的简单模型来解释。多声子散射过程中空穴态的热逃逸仅在高温下发生,而蓝移和增强的PL强度预计会增强电子-声子耦合以及离散态和连续态之间的限制诱导混合,分离能量为3.5 - 7.4 meV。时间分辨PL测量探测了作为量子点中应变分布函数的电场屏蔽效应,确定其为2.5 ± 0.2 MV/cm。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5cd8/6420504/877b0f11ff3d/41598_2019_41075_Fig1_HTML.jpg

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