Li Yuan, Lan Jianyu, Wang Wenliang, Zheng Yulin, Xie Wentong, Tang Xin, Kong Deqi, Xia Yu, Lan Zhibin, Li Runze, He Xiaobin, Li Guoqiang
Opt Express. 2019 Mar 4;27(5):7447-7457. doi: 10.1364/OE.27.007447.
The high-performance 395 nm GaN-based near-ultraviolet (UV) light emitting diodes (LEDs) on Si substrates have been obtained by designing an AlN buffer layer to decrease the dislocations density of the GaN layer. By adopting a multi-layer structure with a high- and low-V/III ratio alternation, a high-quality AlN buffer layer has been obtained with a small full-width at half-maximum (FWHM) for AlN(0002) X-ray rocking curve (XRC) of 648 arcsec and a small root-mean-square roughness of 0.11 nm. By applying the optimized AlN buffer layer, the high-quality GaN layer with GaN(0002) and GaN(10-12) XRC FWHM of 260 and 270 arcsec have been obtained, and the high-performance GaN-based near-UV LED wafers and chips have been fabricated accordingly. The as-fabricated near-UV LED chips exhibit a light output power of 550 mW with a forward voltage of 3.02 V at 350 mA, corresponding to a wall-plug efficiency of 52.0%. These chips with outstanding performance are of paramount importance in the application of curing, sterilization, efficient white lighting, etc.
通过设计AlN缓冲层以降低GaN层的位错密度，在Si衬底上制备出了高性能的基于395 nm GaN的近紫外（UV）发光二极管（LED）。通过采用具有高低V/III比交替的多层结构，获得了高质量的AlN缓冲层，其AlN(0002) X射线摇摆曲线（XRC）的半高宽（FWHM）为648 arcsec，均方根粗糙度为0.11 nm。通过应用优化后的AlN缓冲层，获得了高质量的GaN层，其GaN(0002)和GaN(10-12) XRC FWHM分别为260和270 arcsec，并据此制备出了高性能的基于GaN的近紫外LED晶圆和芯片。所制备的近紫外LED芯片在350 mA时的光输出功率为550 mW，正向电压为3.02 V，对应壁插效率为52.0%。这些性能优异的芯片在固化、杀菌、高效白光照明等应用中至关重要。
