Chongthanaphisut Phunvira, Bac Seul-Ki, Choi Seonghoon, Lee Kyung Jae, Chang Jihoon, Choi Suho, Lee Sanghoon, Nnaji Moses, Liu X, Dobrowolska M, Furdyna J K
Department of Physics, Korea University, Seoul, 136-701, Korea.
Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556, USA.
Sci Rep. 2019 Mar 18;9(1):4740. doi: 10.1038/s41598-019-41138-9.
We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.
我们报告了在具有面外磁各向异性的基于GaMnAsP的三层结构中对铁磁（FM）和反铁磁（AFM）层间交换耦合（IEC）的观测。磁化强度和反常霍尔效应（AHE）测量结果显示，对应于两个GaMnAsP层的磁化转变清晰可辨。小磁滞回线测量揭示了在所研究的所有三层样品中由IEC引起的特征性偏移。有趣的是，随着温度升高，对于顶层GaMnAsP层最薄（7纳米）的三层结构，FM IEC转变为AFM IEC。在同一样品中观测到FM和AFM IEC的温度诱导转变表明，通过控制此类基于GaMnAsP的多层结构中的IEC类型实现器件应用具有可能性。
