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反铁磁IrMn层厚度对弱耦合CoFeB/IrMn/CoFeB三层膜静态和动态磁化的影响

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers.

作者信息

Jhajhria Deepika, Pandya Dinesh K, Chaudhary Sujeet

机构信息

Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.

出版信息

Beilstein J Nanotechnol. 2018 Aug 20;9:2198-2208. doi: 10.3762/bjnano.9.206. eCollection 2018.

Abstract

The static and dynamic magnetization response of the CoFeB/IrMn/CoFeB trilayer system with varying thickness of the antiferromagnetic (AF) IrMn layer is investigated using magnetization hysteresis (-) and ferromagnetic resonance (FMR) measurements. The study shows that the two CoFeB layers are coupled via a long-range dynamic exchange effect through the IrMn layer up to a thickness of 6 nm. It is found that with the increase in IrMn layer thickness a nearly linear enhancement of the effective magnetic damping constant occurs, which is associated with the simultaneous influence of spin pumping and interlayer exchange coupling effects. An extrinsic contribution to the linewidth originating from the two-magnon scattering is also discussed. The AF-induced interfacial damping parameter is derived by studying the evolution of damping with inverse CoFeB thickness. The static magnetic measurements also reveal the interlayer exchange coupling across the IrMn layer both at room temperature and low temperature. The asymmetric hysteresis loop and training effect observed at low temperature is related to the presence of a metastable AF domain state. We show that both the static and dynamic magnetic properties of trilayer films can be adjusted over a wide range by changing the thickness of the IrMn spacer layer.

摘要

利用磁滞回线和铁磁共振(FMR)测量手段,研究了反铁磁(AF)IrMn层厚度变化时CoFeB/IrMn/CoFeB三层膜系统的静态和动态磁化响应。研究表明,在IrMn层厚度达到6 nm之前,两个CoFeB层通过IrMn层经由长程动态交换效应实现耦合。研究发现,随着IrMn层厚度的增加,有效磁阻尼常数几乎呈线性增强,这与自旋泵浦和层间交换耦合效应的同时作用有关。还讨论了源自双磁子散射对线宽的外在贡献。通过研究阻尼随CoFeB厚度倒数的变化,得出了AF诱导的界面阻尼参数。静态磁测量还揭示了在室温及低温下跨越IrMn层的层间交换耦合。在低温下观察到的不对称磁滞回线和训练效应与亚稳AF畴态的存在有关。我们表明,通过改变IrMn间隔层的厚度,可以在很宽的范围内调节三层膜的静态和动态磁性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6599/6122295/d95ef5842571/Beilstein_J_Nanotechnol-09-2198-g002.jpg

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