Buyanova Irina A, Chen Weimin M
Nanotechnology. 2019 Jul 19;30(29):292002. doi: 10.1088/1361-6528/ab1516. Epub 2019 Apr 1.
Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.
稀氮化物是新型的III-V-N族半导体合金，有望应用于从纳米级发光体、太阳能电池到通过光电化学反应进行能源生产以及纳米自旋电子学等众多领域。由于利用分子束外延技术在纳米线（NW）生长方面取得的进展，这些合金直到最近才以一维几何结构形式出现。在本综述中，我们将总结目前用于制造此类新型稀氮化物基纳米线的生长方法，讨论它们的结构、与缺陷相关的性质和光学性质，并提供一些其潜在应用的示例。
