Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China. School of Microelectronics, Shandong University, Jinan, 250100, People's Republic of China.
Nanotechnology. 2019 May 24;30(21):212002. doi: 10.1088/1361-6528/ab03ee. Epub 2019 Feb 1.
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
由于 Sb 基 III-V 纳米线 (NWs) 的高迁移率、窄带隙、强自旋轨道耦合和大 g 因子，在过去十年中，它们在高速电子学、长波长光电探测器和量子超导领域引起了极大的兴趣。在这篇综述中，我们旨在对二元和三元 Sb 基 III-V NW 的最新进展进行综合总结，从基本性质、NW 生长机制、典型的合成方法到它们在晶体管、光电探测器和马约拉纳费米子检测中的应用。到目前为止，已经采用和开发了著名的 NWs 生长技术，如固态源化学气相沉积 (CVD)、分子束外延、金属有机气相外延和金属有机 CVD 等，以实现 Sb 基 III-V NW 的可控生长。几个参数，包括加热温度、源材料的 III/V 比、生长温度、催化剂尺寸和种类以及生长衬底，对 Sb 基 III-V NW 的形态、位置、直径分布、生长方向和晶体相起着重要作用。此外，我们还讨论了 Sb 基 III-V NW 的光电应用，如场效应晶体管、隧道二极管、低功耗逆变器和红外探测器等。重要的是，由于所有 III-V 半导体中最强的自旋轨道相互作用和巨大的 g 因子，InSb 作为一维 NW 的几何形状被认为是探测马约拉纳费米子的最有前途的候选材料。最后，我们还总结了该领域存在的主要挑战，并为 Sb 基 III-V NW 的未来发展提出了一些建议。
