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具有记忆元件的非线性网络:基于通量-电荷分析方法的复杂动力学

Nonlinear Networks With Mem-Elements: Complex Dynamics via Flux-Charge Analysis Method.

作者信息

Corinto Fernando, Di Marco Mauro, Forti Mauro, Chua Leon

出版信息

IEEE Trans Cybern. 2020 Nov;50(11):4758-4771. doi: 10.1109/TCYB.2019.2904903. Epub 2019 Apr 3.

DOI:10.1109/TCYB.2019.2904903
PMID:30951485
Abstract

Nonlinear dynamic memory elements, as memristors, memcapacitors, and meminductors (also known as mem-elements), are of paramount importance in conceiving the neural networks, mem-computing machines, and reservoir computing systems with advanced computational primitives. This paper aims to develop a systematic methodology for analyzing complex dynamics in nonlinear networks with such emerging nanoscale mem-elements. The technique extends the flux-charge analysis method (FCAM) for nonlinear circuits with memristors to a broader class of nonlinear networks N containing also memcapacitors and meminductors. After deriving the constitutive relation and equivalent circuit in the flux-charge domain of each two-terminal element in N , this paper focuses on relevant subclasses of N for which a state equation description can be obtained. On this basis, salient features of the dynamics are highlighted and studied analytically: 1) the presence of invariant manifolds in the autonomous networks; 2) the coexistence of infinitely many different reduced-order dynamics on manifolds; and 3) the presence of bifurcations due to changing the initial conditions for a fixed set of parameters (also known as bifurcations without parameters). Analytic formulas are also given to design nonautonomous networks subject to pulses that drive trajectories through different manifolds and nonlinear reduced-order dynamics. The results, in this paper, provide a method for a comprehensive understanding of complex dynamical features and computational capabilities in nonlinear networks with mem-elements, which is fundamental for a holistic approach in neuromorphic systems with such emerging nanoscale devices.

摘要

非线性动态存储元件,如忆阻器、忆容器和忆感器(也称为忆元件),对于构建具有先进计算原语的神经网络、忆阻器计算机和储层计算系统至关重要。本文旨在开发一种系统方法,用于分析具有此类新兴纳米级忆元件的非线性网络中的复杂动力学。该技术将用于含忆阻器的非线性电路的磁通-电荷分析方法(FCAM)扩展到更广泛的一类非线性网络N,该网络还包含忆容器和忆感器。在推导N中每个二端元件在磁通-电荷域中的本构关系和等效电路之后,本文重点关注N的相关子类,对于这些子类可以获得状态方程描述。在此基础上,突出并分析研究了动力学的显著特征:1)自治网络中不变流形的存在;2)流形上无限多个不同降阶动力学的共存;3)由于固定参数集的初始条件变化而导致的分岔(也称为无参数分岔)。还给出了解析公式,用于设计受脉冲作用的非自治网络,这些脉冲驱动轨迹通过不同的流形和非线性降阶动力学。本文的结果提供了一种方法,用于全面理解具有忆元件的非线性网络中的复杂动力学特征和计算能力,这对于采用此类新兴纳米级器件的神经形态系统的整体方法至关重要。

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IEEE Trans Cybern. 2020 Nov;50(11):4758-4771. doi: 10.1109/TCYB.2019.2904903. Epub 2019 Apr 3.
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引用本文的文献

1
Memristor Circuits for Simulating Neuron Spiking and Burst Phenomena.用于模拟神经元放电和爆发现象的忆阻器电路。
Front Neurosci. 2021 Jun 10;15:681035. doi: 10.3389/fnins.2021.681035. eCollection 2021.