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基于非晶丝巨磁阻抗效应的高度集成微机电系统磁传感器

Highly Integrated MEMS Magnetic Sensor Based on GMI Effect of Amorphous Wire.

作者信息

Chen Jiawen, Li Jianhua, Xu Lixin

机构信息

School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.

出版信息

Micromachines (Basel). 2019 Apr 8;10(4):237. doi: 10.3390/mi10040237.

Abstract

In this paper, a highly integrated amorphous wire Giant magneto-impedance (GMI) magnetic sensor using micro electron mechanical system (MEMS) technology is designed, which is equipped with a signal conditioning circuit and uses a data acquisition card to convert the output signal of the circuit into a digital signal. The structure and package of the sensor are introduced. The sensor sensing principle and signal conditioning circuit are analyzed. The output of the sensor is tested, calibrated, and the relationship between the GMI effect of the amorphous wire and the excitation current frequency is explored. The sensor supplies voltage is ±5 V, and the excitation signal is a square wave signal with a frequency of 60 MHz and an amplitude of 1.2 V generated by the quartz crystal. The sensor has the largest GMI effect at 60 MHz with a sensitivity of 4.8 V/Oe and a resolution of 40 nT.

摘要

本文设计了一种采用微电子机械系统(MEMS)技术的高度集成非晶丝巨磁阻抗(GMI)磁传感器,该传感器配备了信号调理电路,并使用数据采集卡将电路的输出信号转换为数字信号。介绍了传感器的结构和封装。分析了传感器的传感原理和信号调理电路。对传感器的输出进行了测试、校准,并探讨了非晶丝的GMI效应与激励电流频率之间的关系。传感器供电电压为±5 V,激励信号是由石英晶体产生的频率为60 MHz、幅度为1.2 V的方波信号。该传感器在60 MHz时具有最大的GMI效应,灵敏度为4.8 V/Oe,分辨率为40 nT。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8858/6523168/8a426540ce58/micromachines-10-00237-g001.jpg

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