Chen Yulong, Li Jianhua, Chen Jianwen, Xu Lixin
School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Micromachines (Basel). 2018 Jun 14;9(6):299. doi: 10.3390/mi9060299.
This paper presents a novel fabrication method for amorphous alloy wire giant magneto-impedance (GMI) magnetic sensor based on micro electro mechanical systems (MEMS) technology. In this process, negative SU-8 thick photoresist was proposed as the solder mask due to its excellent properties, such as good stability, mechanical properties, etc. The low melting temperature solder paste was used for the electrical connections with the amorphous alloy wire and the electrode pads. Compared with the conventional welding fabrication methods, the proposed micro electro mechanical systems (MEMS) process in this paper showed the advantages of good impedance consistency, and can be fabricated at a low temperature of 150 °C. The amorphous alloy wire magnetic sensor made by the conventional method and by the micro electro mechanical systems (MEMS) process were tested and compared, respectively. The minimum resistance value of the magnetic sensor made by the conventional welding method is 19.8 Ω and the maximum is 28.1 Ω. The variance of the resistance is 7.559 Ω². The minimum resistance value of the magnetic sensor made by micro electro mechanical systems (MEMS) process is 20.1 Ω and the maximum is 20.5 Ω. The variance of the resistance is 0.029 Ω². The test results show that the impedance consistency by micro electro mechanical systems (MEMS) process is better than that of the conventional method. The sensor sensitivity is around 150 mV/Oe and the nonlinearity is less than 0.92% F.S.
本文提出了一种基于微机电系统(MEMS)技术的非晶合金丝巨磁阻抗(GMI)磁传感器的新型制造方法。在此工艺中,由于负性SU - 8厚光刻胶具有良好的稳定性、机械性能等优异特性,被用作阻焊层。低熔点焊膏用于非晶合金丝与电极焊盘的电气连接。与传统焊接制造方法相比,本文提出的微机电系统(MEMS)工艺具有阻抗一致性好的优点,并且可以在150℃的低温下制造。分别对采用传统方法和微机电系统(MEMS)工艺制造的非晶合金丝磁传感器进行了测试和比较。采用传统焊接方法制造的磁传感器的最小电阻值为19.8Ω,最大电阻值为28.1Ω。电阻的方差为7.559Ω²。采用微机电系统(MEMS)工艺制造的磁传感器的最小电阻值为20.1Ω,最大电阻值为20.5Ω。电阻的方差为0.029Ω²。测试结果表明,微机电系统(MEMS)工艺的阻抗一致性优于传统方法。传感器灵敏度约为150mV/Oe,非线性度小于0.92%F.S.