锑化银碘纳米线中的铁电光伏效应。
A Ferroelectric-Photovoltaic Effect in SbSI Nanowires.
作者信息
Mistewicz Krystian, Nowak Marian, Stróż Danuta
机构信息
Institute of Physics-Center for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland.
Institute of Material Science, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, Poland.
出版信息
Nanomaterials (Basel). 2019 Apr 9;9(4):580. doi: 10.3390/nano9040580.
A ferroelectric-photovoltaic effect in nanowires of antimony sulfoiodide (SbSI) is presented for the first time. Sonochemically prepared SbSI nanowires have been characterized using high-resolution transmission electron microscopy (HRTEM) and optical diffuse reflection spectroscopy (DRS). The temperature dependences of electrical properties of the fabricated SbSI nanowires have been investigated too. The indirect forbidden energy gap = 1.862 (1) eV and Curie temperature = 291 (2) K of SbSI nanowires have been determined. Aligned SbSI nanowires have been deposited in an electric field between Pt electrodes on alumina substrate. The photoelectrical response of such a prepared ferroelectric-photovoltaic (FE-PV) device can be switched using a poling electric field and depends on light intensity. The photovoltage, generated under λ = 488 nm illumination of = 127 mW/cm² optical power density, has reached = 0.119 (2) V. The presented SbSI FE-PV device is promising for solar energy harvesting as well as for application in non-volatile memories based on the photovoltaic effect.
首次报道了硫碘化锑（SbSI）纳米线中的铁电光伏效应。利用高分辨率透射电子显微镜（HRTEM）和光学漫反射光谱（DRS）对超声化学制备的SbSI纳米线进行了表征。还研究了所制备的SbSI纳米线电学性质的温度依赖性。确定了SbSI纳米线的间接禁带宽度 = 1.862（1）eV和居里温度 = 291（2）K。将排列好的SbSI纳米线沉积在氧化铝衬底上铂电极之间的电场中。这种制备的铁电光伏（FE-PV）器件的光电响应可以通过极化电场进行切换，并且取决于光强。在光功率密度 = 127 mW/cm²的λ = 488 nm光照下产生的光电压已达到 = 0.119（2）V。所展示的SbSI FE-PV器件在太阳能收集以及基于光伏效应的非易失性存储器应用方面具有前景。
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