Szabó Anna, Bakos László Péter, Karajz Dániel, Gyulavári Tamás, Tóth Zsejke-Réka, Pap Zsolt, Szilágyi Imre Miklós, Igricz Tamás, Parditka Bence, Erdélyi Zoltán, Hernadi Klara
Department of Applied and Environmental Chemistry, University of Szeged, H-6720 Szeged, Hungary.
Department of Inorganic and Analytical Chemistry, Budapest University of Technology and Economics, Muegyetem rakpart 3., H-1111 Budapest, Hungary.
Materials (Basel). 2019 Apr 2;12(7):1095. doi: 10.3390/ma12071095.
Vertically aligned carbon nanotubes (VACNTs or "CNT forest") were decorated with semiconductor particles (TiO₂ and ZnO) by atomic layer deposition (ALD). Both the structure and morphology of the components were systematically studied using scanning (SEM) and high resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and X-ray diffraction (XRD) methods. Characterization results revealed that the decoration was successful in the whole bulk of VACNTs. The effect of a follow-up heat treatment was also investigated and its effect on the structure was proved. It was attested that atomic layer deposition is a suitable technique for the fabrication of semiconductor/vertically aligned carbon nanotubes composites. Regarding their technological importance, we hope that semiconductor/CNT forest nanocomposites find potential application in the near future.
通过原子层沉积（ALD）法，在垂直排列的碳纳米管（VACNTs或“碳纳米管森林”）上修饰了半导体颗粒（TiO₂和ZnO）。使用扫描电子显微镜（SEM）、高分辨率透射电子显微镜（HRTEM）、能量色散X射线光谱仪（EDX）、拉曼光谱仪和X射线衍射仪（XRD）等方法，对各组分的结构和形态进行了系统研究。表征结果表明，修饰在整个VACNTs本体中均成功实现。还研究了后续热处理的效果，并证实了其对结构的影响。结果证明，原子层沉积是制备半导体/垂直排列碳纳米管复合材料的合适技术。鉴于其技术重要性，我们希望半导体/碳纳米管森林纳米复合材料在不久的将来能找到潜在应用。
