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基于硅层上交叉图案化的上转换材料槽波导提高上转换效率

Improving Upconversion Efficiency Based on Cross-Patterned Upconversion Material Slot Waveguides on a Silicon Layer.

作者信息

Kim Youngsoo, Moon Kihwan, Lee Young Jin, Hong Seokhyeon, Kwon Soon-Hong

机构信息

Department of Physics, Chung-Ang University, Seoul 06974, Korea.

出版信息

Nanomaterials (Basel). 2019 Apr 3;9(4):520. doi: 10.3390/nano9040520.

Abstract

Upconversion (UC) materials can be used to harvest near-infrared (NIR) light and convert it into visible light. Although this improves optical device operating spectral range and efficiency, e.g., solar cells, typical UC material conversion efficiency is too low for practical devices. We propose a cross-patterned slot waveguide constructed from UC material embedded in a high index semiconductor layer to improve UC. Since the slot waveguide mode is induced in the low index UC slot, NIR absorption (~970 nm) increased 25-fold compared with film structures. Furthermore, the spontaneous emission enhancement rate at 660 nm increased 9.6-fold compared to the reference film due to resonance excited in the UC slot (Purcell effect). Thus, the proposed UC slot array structure improved UC efficiency 240-fold considering absorption and emission enhancements. This double resonance UC improvement can be applied to practical optical devices.

摘要

上转换(UC)材料可用于收集近红外(NIR)光并将其转换为可见光。尽管这改善了光学器件的工作光谱范围和效率,例如太阳能电池,但典型的UC材料转换效率对于实际器件来说过低。我们提出一种由嵌入高折射率半导体层中的UC材料构成的交叉图案化狭缝波导,以改善上转换。由于在低折射率的UC狭缝中诱导出狭缝波导模式,与薄膜结构相比,近红外吸收(~970nm)增加了25倍。此外,由于在UC狭缝中激发的共振(珀塞尔效应),660nm处的自发发射增强率与参考薄膜相比增加了9.6倍。因此,考虑到吸收和发射增强,所提出的UC狭缝阵列结构将上转换效率提高了240倍。这种双共振上转换改善可应用于实际光学器件。

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