用于近红外发光二极管的稳定掺锡FAPbI纳米晶体。
Stable Sn doped FAPbI nanocrystals for near-infrared LEDs.
作者信息
Begum Raihana, Chin Xin Yu, Li Mingjie, Damodaran Bahulayan, Sum Tze Chien, Mhaisalkar Subodh, Mathews Nripan
机构信息
Energy Research Institute@NTU (ERI@N), Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553, Singapore.
出版信息
Chem Commun (Camb). 2019 May 7;55(38):5451-5454. doi: 10.1039/c9cc01526d.
Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs.
在此，我们报道了在FAPbI3纳米晶中掺杂Sn2+以稳定α相，同时使用丙酸作为共配体。Sn2+掺杂将发射量子产率从35%提高到63%，并显著提高了胶体稳定性和相稳定性。此外，我们展示了掺Sn的FAPbI3纳米晶在近红外（NIR）发光二极管中的应用。
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