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用于低温存储器的周期性钴/铌伪自旋阀。

Periodic Co/Nb pseudo spin valve for cryogenic memory.

作者信息

Klenov Nikolay, Khaydukov Yury, Bakurskiy Sergey, Morari Roman, Soloviev Igor, Boian Vladimir, Keller Thomas, Kupriyanov Mikhail, Sidorenko Anatoli, Keimer Bernhard

机构信息

Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow 119991, Russia.

Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, 141700, Russia.

出版信息

Beilstein J Nanotechnol. 2019 Apr 9;10:833-839. doi: 10.3762/bjnano.10.83. eCollection 2019.

Abstract

We present a study of magnetic structures with controllable effective exchange energy for Josephson switches and memory applications. As a basis for a weak link we propose to use a periodic structure composed of ferromagnetic (F) layers spaced by thin superconductors (s). Our calculations based on the Usadel equations show that switching from parallel (P) to antiparallel (AP) alignment of neighboring F layers can lead to a significant enhancement of the critical current through the junction. To control the magnetic alignment we propose to use a periodic system whose unit cell is a pseudo spin valve of structure F/s/F/s where F and F are two magnetic layers having different coercive fields. In order to check the feasibility of controllable switching between AP and P states through the whole periodic structure, we prepared a superlattice [Co(1.5 nm)/Nb(8 nm)/Co(2.5 nm)/Nb(8 nm)] between two superconducting layers of Nb(25 nm). Neutron scattering and magnetometry data showed that parallel and antiparallel alignment can be controlled with a magnetic field of only several tens of Oersted.

摘要

我们展示了一项针对用于约瑟夫森开关和存储器应用的具有可控有效交换能的磁性结构的研究。作为弱连接的基础,我们提议使用由薄超导层(s)隔开的铁磁(F)层组成的周期性结构。我们基于乌萨德尔方程的计算表明,相邻F层从平行(P)排列切换到反平行(AP)排列可导致通过结的临界电流显著增强。为了控制磁排列,我们提议使用一种周期性系统,其晶胞是结构为F/s/F/s的伪自旋阀,其中F和F是具有不同矫顽场的两个磁性层。为了检验通过整个周期性结构在AP和P状态之间可控切换的可行性,我们在两个25 nm厚的Nb超导层之间制备了一个超晶格[Co(1.5 nm)/Nb(8 nm)/Co(2.5 nm)/Nb(8 nm)]。中子散射和磁力测量数据表明,仅用几十奥斯特的磁场就可以控制平行和反平行排列。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/41bb/6466729/070057a80f47/Beilstein_J_Nanotechnol-10-833-g002.jpg

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