Performance of Extreme Ultraviolet Coherent Scattering Microscope.

For the successful implementation of extreme ultraviolet lithography (EUVL) into high-volume manufacturing, the development of a novel structure mask for resolution improvement is essential. In this paper, coherent scattering microscopy (CSM) is introduced as an actinic metrology technique based on coherent diffractive imaging (CDI) for EUV mask development. CDI reconstructs the mask image using diffraction patterns from the mask through mathematical calculations. CSM can analyze details of an EUV mask such as its diffraction efficiency and phase information.