Kim Sang-Kon
Department of Science, Hongik University, Seoul 121-791, Republic of Korea.
J Nanosci Nanotechnol. 2019 Aug 1;19(8):4657-4660. doi: 10.1166/jnn.2019.16698.
The extreme ultraviolet (EUV) lithography has the potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, but faces a number of persistent challenges. At the 5-nm technology node, a precise process simulator with nanometer accuracy will be required. For a precise simulation, the better understanding the EUV process mechanism is critical for the improvement of resist performance and the development of new resist materials. In this paper, an EUV stochastic simulator is introduced for the modeling of EUV processes. The line-edge roughness (LER) and resist characters are described for the requirements of 5-nm pattern performance using this stochastic simulation. Through the opportunity to simulate EUVL materials and processes, the performance of EUVL resist and the optimization of EUVL parameters for 5-nm pattern formation can be conducted.
极紫外（EUV）光刻技术有潜力在半导体制造中实现5纳米半节距分辨率，但面临着许多持续存在的挑战。在5纳米技术节点，将需要一个具有纳米精度的精确工艺模拟器。为了进行精确模拟，更好地理解EUV工艺机制对于提高光刻胶性能和开发新型光刻胶材料至关重要。本文介绍了一种用于EUV工艺建模的EUV随机模拟器。利用这种随机模拟，针对5纳米图案性能要求描述了线边缘粗糙度（LER）和光刻胶特性。通过模拟EUVL材料和工艺的机会，可以对EUVL光刻胶的性能以及用于5纳米图案形成的EUVL参数进行优化。
