Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University, 100 Inharo, Michuhol-gu, Incheon 22212, Korea.
J Nanosci Nanotechnol. 2019 Oct 1;19(10):6506-6511. doi: 10.1166/jnn.2019.17064.
Inductively coupled plasma reactive ion etching (ICPRIE) of copper thin films masked with photoresist (PR) and SiO₂ thin films was performed in H₂/Ar gas. As the H₂ concentration increased, the etch rates of copper films significantly decreased. The etch profiles show heavy redeposition on the sidewall of the etched films in low H₂ concentration but steep etch profiles without redeposition and etch by-product were obtained in high H₂ concentration. The systematic variation of the etch parameter such as ICP source power, dc-bias voltage to substrate, and process pressure was carried out to characterize the copper etching in H₂/Ar gas. Based on the etch characteristics of copper films, Langmuir prove analysis, and X-ray photoelectron spectroscopy, it was revealed the physical sputtering by ions and the formation of the volatile copper compound and the protection layer had great influence on achieving a good etch profile.
采用 H₂/Ar 气体对涂覆有光刻胶（PR）和 SiO₂ 薄膜的铜薄膜进行感应耦合等离子体反应离子刻蚀（ICPRIE）。随着 H₂ 浓度的增加，铜薄膜的刻蚀速率显著降低。在低 H₂ 浓度下，刻蚀剖面显示出在刻蚀薄膜的侧壁上有严重的再沉积现象，但在高 H₂ 浓度下，得到了没有再沉积和刻蚀副产物的陡峭刻蚀剖面。系统地改变 ICP 源功率、直流偏置电压到衬底和工艺压力等刻蚀参数，以表征 H₂/Ar 气体中的铜刻蚀。基于铜薄膜的刻蚀特性、朗缪尔证明分析和 X 射线光电子能谱，揭示了离子的物理溅射以及挥发性铜化合物和保护层的形成对获得良好的刻蚀剖面有很大的影响。
