Department of Chemical Engineering, Inha University, 100, Inharo, Michuhol-gu, Incheon, 22212, Republic of Korea.
J Nanosci Nanotechnol. 2021 Nov 1;21(11):5628-5634. doi: 10.1166/jnn.2021.19462.
Pulse-modulated plasma etching of copper masked using SIO₂ films was conducted via a CH₃COOH/Ar. The etch characteristics were examined under pulse-modulated plasma. As the duty ratio of pulse decreased and the frequency of pulse increased, the etch selectivity and etch profile were improved. X-ray photoelectron spectroscopy and indicated that more copper oxides (Cu₂O and CuO) and Cu(CH₃COO)₂ were formed using pulse-modulated plasma than those formed using continuous-wave (CW) plasma. As the concentration of CH3COOH gas in pulse-modulated plasma increased, the formation of these copper compounds increased, which improved the etch profiles. Optical emission spectroscopy confirmed that the active ingredients of the plasma increased with decreasing pulse duty ratio and increasing frequency. Therefore, the optimized pulsed plasma etching of copper via a CH₃COOH/Ar gas provides better etch profile than that by CW plasma etching.
采用 SIO₂ 膜对铜进行脉冲调制等离子体蚀刻，使用 CH₃COOH/Ar。在脉冲调制等离子体下检查了蚀刻特性。随着脉冲占空比的降低和脉冲频率的增加，蚀刻选择性和蚀刻轮廓得到了改善。X 射线光电子能谱和表明，与连续波 (CW) 等离子体相比，使用脉冲调制等离子体形成了更多的氧化铜 (Cu₂O 和 CuO) 和 Cu(CH₃COO)₂。随着脉冲调制等离子体中 CH3COOH 气体浓度的增加，这些铜化合物的形成增加，从而改善了蚀刻轮廓。发射光谱证实，随着脉冲占空比的降低和频率的增加，等离子体的活性成分增加。因此，通过 CH₃COOH/Ar 气体优化的铜脉冲等离子体蚀刻比 CW 等离子体蚀刻提供更好的蚀刻轮廓。
