He Xiaowei, Sun Liuyang, Gifford Brendan J, Tretiak Sergei, Piryatinski Andrei, Li Xiaoqin, Htoon Han, Doorn Stephen K
Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
Nanoscale. 2019 May 9;11(18):9125-9132. doi: 10.1039/c9nr02175b.
Defect states introduced to single wall carbon nanotubes (SWCNTs) by covalent functionalization give rise to novel photophysics and are showing promise as sources of room-temperature quantum emission of interest for quantum information technologies. Evaluation of their ultimate potential for such needs requires a knowledge of intrinsic dynamic and coherence behaviors. Here we probe population relaxation and dephasing time (T1 and T2, respectively) of defect states following deposition of functionalized SWCNTs on polystyrene substrates that are subjected to an isopropanol rinse to remove surfactant. Low-temperature (4 K) photo-luminescence linewidths (∼100 μeV) following surfactant removal are a factor of ten narrower than those for unrinsed SWCNTs. Measured recombination lifetimes, on the order of 1.5 ns, compare well with those estimated from DFT calculations, indicating that the intrinsic radiatively-limited lifetime is approached following this sample treatment. Dephasing times evaluated directly through an interferometric approach compare closely to those established by photoluminescence linewidths. Dephasing times as high as 12 ps are found; a factor of up to 6 times greater than those evaluated for band-edge exciton states. Such enhancement of dephasing and photoluminescence lifetime behavior is a direct consequence of exciton localization at the SWCNT defect sites.
通过共价功能化引入单壁碳纳米管(SWCNT)的缺陷态会产生新颖的光物理现象,并有望成为量子信息技术中室温量子发射源。评估它们满足此类需求的最终潜力需要了解其内在的动力学和相干行为。在此,我们探测了功能化单壁碳纳米管沉积在经异丙醇冲洗以去除表面活性剂的聚苯乙烯衬底上后,缺陷态的粒子数弛豫时间和退相时间(分别为T1和T2)。去除表面活性剂后的低温(4K)光致发光线宽(约100μeV)比未冲洗的单壁碳纳米管窄一个数量级。测得的复合寿命约为1.5 ns,与密度泛函理论(DFT)计算估计的寿命相当,表明经过这种样品处理后接近其本征辐射限制寿命。通过干涉测量法直接评估的退相时间与通过光致发光线宽确定的退相时间密切相关。发现退相时间高达12 ps;比带边激子态评估的退相时间大高达6倍。退相和光致发光寿命行为的这种增强是激子定位于单壁碳纳米管缺陷位点的直接结果。