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绝缘体上4H碳化硅中的高品质因数、高限制微环谐振器。

High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator.

作者信息

Zheng Yi, Pu Minhao, Yi Ailun, Chang Bingdong, You Tiangui, Huang Kai, Kamel Ayman N, Henriksen Martin R, Jørgensen Asbjørn A, Ou Xin, Ou Haiyan

出版信息

Opt Express. 2019 Apr 29;27(9):13053-13060. doi: 10.1364/OE.27.013053.

Abstract

Silicon carbide (SiC) exhibits promising material properties for nonlinear integrated optics. We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high-confinement SiC microring resonators with sub-micron waveguide cross-sectional dimensions. The Q factor of SiC microring resonators in such a sub-micron waveguide dimension is improved by a factor of six after surface roughness reduction by applying a wet oxidation process. We achieve a high Q factor (73,000) for such devices and show engineerable dispersion from normal to anomalous dispersion by controlling the waveguide cross-sectional dimension, which paves the way toward nonlinear applications in SiC microring resonators.

摘要

碳化硅(SiC)在非线性集成光学方面展现出了有前景的材料特性。我们报道了一种基于晶体4H-SiC的绝缘体上碳化硅平台,并展示了具有亚微米波导横截面尺寸的高约束碳化硅微环谐振器。通过应用湿氧化工艺降低表面粗糙度后,这种亚微米波导尺寸的碳化硅微环谐振器的品质因数提高了六倍。我们实现了此类器件的高品质因数(73,000),并通过控制波导横截面尺寸实现了从正常色散到反常色散的可调控色散,这为碳化硅微环谐振器的非线性应用铺平了道路。

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