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嵌入丁二烯溶剂中的二硫化钼纳米带的电子输运性质。

Electronic transport properties of MoS nanoribbons embedded in butadiene solvent.

作者信息

Pezo Armando, Lima Matheus P, Costa Marcio, Fazzio Adalberto

机构信息

Brazilian Nanotechnology National Laboratory (LNNano, CNPEM), Rua Giusepe Máximo Scalfaro 10000, Campinas, SP 13083-970, Brazil.

Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo, Brazil.

出版信息

Phys Chem Chem Phys. 2019 Jun 7;21(21):11359-11366. doi: 10.1039/c9cp01590f. Epub 2019 May 21.

Abstract

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport. In this work, we investigate the transport properties of MoS zigzag nanoribbons under a butadiene (CH) atmosphere, as this compound has been used to obtain MoS flakes by exfoliation. We use density functional theory combined with non-equilibrium Green's function techniques, in a methodology contemplating disorder and different coverages. Our results indicate a strong modulation of the TMDC electronic transport properties driven by butadiene molecules anchored at their edges, producing the suppression of currents due to a backscattering process. Our results indicate a high sensitivity of the TMDC edge states. Thus, the mechanisms used to reduce the dimensionality of MoS considerably modify its transport properties.

摘要

过渡金属二硫属化物(TMDCs)是纳米电子学及相关领域应用中很有前景的材料,其金属边缘态在电子输运中起着基础性作用。在这项工作中,我们研究了在丁二烯(CH)气氛下MoS锯齿形纳米带的输运性质,因为这种化合物已被用于通过剥离获得MoS薄片。我们采用密度泛函理论结合非平衡格林函数技术,在考虑无序和不同覆盖度的方法中进行研究。我们的结果表明,锚定在其边缘的丁二烯分子对TMDC的电子输运性质有强烈调制作用,由于背散射过程导致电流被抑制。我们的结果表明TMDC边缘态具有高灵敏度。因此,用于大幅降低MoS维度的机制会显著改变其输运性质。

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