Guo Jingjing, Zhou Zhongpo, Li Hengheng, Wang Haiying, Liu Chang
Henan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
Nanoscale Res Lett. 2019 May 28;14(1):174. doi: 10.1186/s11671-019-2999-6.
The structural and electronic properties of a monolayer and bilayer blue phosphorene/graphene-like GaN van der Waals heterostructures are studied using first-principle calculations. The results show that the monolayer-blue phosphorene/graphene-like GaN heterostructure is an indirect bandgap semiconductor with intrinsic type II band alignment. More importantly, the external electric field tunes the bandgap of monolayer-blue phosphorene/graphene-like GaN and bilayer-blue phosphorene/graphene-like GaN, and the relationship between bandgap and external electric field indicates a Stark effect. The semiconductor-to-metal transition is observed in the presence of a strong electric field.
利用第一性原理计算研究了单层和双层蓝色磷烯/类石墨烯氮化镓范德华异质结构的结构和电子性质。结果表明，单层蓝色磷烯/类石墨烯氮化镓异质结构是一种具有本征II型能带排列的间接带隙半导体。更重要的是，外部电场可调节单层蓝色磷烯/类石墨烯氮化镓和双层蓝色磷烯/类石墨烯氮化镓的带隙，且带隙与外部电场之间的关系表明存在斯塔克效应。在强电场作用下观察到了半导体到金属的转变。
