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基于组氨酸掺杂的MoS量子点的电泵浦白光发光二极管

Electrically Pumped White-Light-Emitting Diodes Based on Histidine-Doped MoS Quantum Dots.

作者信息

Lu Guan-Zhang, Wu Meng-Jer, Lin Tzu-Neng, Chang Chi-Yuan, Lin Wei-Ling, Chen Yi Ting, Hou Chen-Fu, Cheng Hao-Jan, Lin Tai-Yuan, Shen Ji-Lin, Chen Yang-Fang

机构信息

Department of Optoelectronic and Materials Technology, National Taiwan Ocean University, Keelung, 202, Taiwan.

Department of Physics, National Taiwan University, Taipei, 106, Taiwan.

出版信息

Small. 2019 Jul;15(30):e1901908. doi: 10.1002/smll.201901908. Epub 2019 Jun 5.

Abstract

MoS quantum dots (QDs)-based white-light-emitting diodes (QD-WLEDs) are designed, fabricated, and demonstrated. The highly luminescent, histidine-doped MoS QDs synthesized by microwave induced fragmentation of 2D MoS nanoflakes possess a wide distribution of available electronic states as inferred from the pronounced excitation-wavelength-dependent emission properties. Notably, the histidine-doped MoS QDs show a very strong emission intensity, which exceeds seven times of magnitude larger than that of pristine MoS QDs. The strongly enhanced emission is mainly attributed to nitrogen acceptor bound excitons and passivation of defects by histidine-doping, which can enhance the radiative recombination drastically. The enabled electroluminescence (EL) spectra of the QD-WLEDs with the main peak around 500 nm are found to be consistent with the photoluminescence spectra of the histidine-doped MoS QDs. The enhanced intensity of EL spectra with the current increase shows the stability of histidine-doped MoS based QD-WLEDs. The typical EL spectrum of the novel QD-WLEDs has a Commission Internationale de l'Eclairage chromaticity coordinate of (0.30, 0.36) exhibiting an intrinsic broadband white-light emission. The unprecedented and low-toxicity QD-WLEDs based on a single light-emitting material can serve as an excellent alternative for using transition metal dichalcogenides QDs as next generation optoelectronic devices.

摘要

设计、制备并展示了基于硫化钼量子点(QDs)的白光发光二极管(QD-WLEDs)。通过二维硫化钼纳米片的微波诱导碎片化合成的高发光性、组氨酸掺杂的硫化钼量子点,从其明显的激发波长依赖性发射特性推断,具有广泛分布的可用电子态。值得注意的是,组氨酸掺杂的硫化钼量子点显示出非常强的发射强度,比原始硫化钼量子点的发射强度大超过七个数量级。发射的强烈增强主要归因于氮受体束缚激子以及组氨酸掺杂对缺陷的钝化,这可以极大地增强辐射复合。发现主峰值在500nm左右的QD-WLEDs的电致发光(EL)光谱与组氨酸掺杂的硫化钼量子点的光致发光光谱一致。随着电流增加,EL光谱强度的增强表明基于组氨酸掺杂硫化钼的QD-WLEDs的稳定性。新型QD-WLEDs的典型EL光谱的国际照明委员会色度坐标为(0.30,0.36),呈现出固有的宽带白光发射。基于单一发光材料的前所未有的低毒性QD-WLEDs可以作为使用过渡金属二硫属化物量子点作为下一代光电器件的极佳替代品。

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