Chen Xi, Li Jingzhou, Zhong Yichi, Li Xin, Pan Mingzhong, Qi Hongxing, Dong Hongxing, Zhang Long
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
University of Chinese Academy of Sciences, Beijing, China.
Front Chem. 2022 Mar 8;10:845206. doi: 10.3389/fchem.2022.845206. eCollection 2022.
Semiconductor quantum dots (QDs) are a promising luminescent phosphor for next-generation lightings and displays. In particular, QD-based white light-emitting diodes (WLEDs) are considered to be the candidate light sources with the most potential for application in displays. In this work, we synthesized quaternary/ternary core/shell alloyed CdZnSeS/ZnSeS QDs with high bright emission intensity. The QDs show good thermal stability by performing high temperature-dependent experiments that range from 295 to 433 K. Finally, the WLED based on the CdZnSeS/ZnSeS QDs exhibits a luminous efficiency (LE) of 28.14 lm/W, an external quantum efficiency (EQE) of 14.86%, and a warm bright sunlight close to the spectrum of daylight (Commission Internationale de l'éclairage (CIE) coordinates 0.305, 0.371). Moreover, the photoluminescence (PL) intensity, LE, EQE, and correlated color temperature (CCT) of as-prepared QD WLED remained relatively stable with only slight changes in the luminescence stability experiment.
半导体量子点（QDs）是下一代照明和显示领域中一种很有前景的发光磷光体。特别是，基于量子点的白光发光二极管（WLEDs）被认为是在显示应用中最具潜力的候选光源。在这项工作中，我们合成了具有高明亮发射强度的四元/三元核/壳合金化CdZnSeS/ZnSeS量子点。通过进行温度范围从295到433K的高温相关实验，这些量子点显示出良好的热稳定性。最后，基于CdZnSeS/ZnSeS量子点的WLED表现出28.14 lm/W的发光效率（LE）、14.86%的外量子效率（EQE），以及接近日光光谱的暖白色明亮光（国际照明委员会（CIE）坐标为0.305，0.371）。此外，在发光稳定性实验中，所制备的量子点WLED的光致发光（PL）强度、LE、EQE和相关色温（CCT）仅发生轻微变化，保持相对稳定。
