Key Daryl, Letts Edward, Tsou Chuan-Wei, Ji Mi-Hee, Bakhtiary-Noodeh Marzieh, Detchprohm Theeradetch, Shen Shyh-Chiang, Dupuis Russell, Hashimoto Tadao
SixPoint Materials, Inc., Buellton, CA 93427, USA.
Georgia Institute of Technology, Atlanta, GA 30332, USA.
Materials (Basel). 2019 Jun 14;12(12):1925. doi: 10.3390/ma12121925.
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2" GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven -plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The boules had an average radius of curvature of 10.16 ± 3.63 m. The quality of the boules was highly correlated to the quality of the seeds. A PIN diode grown at Georgia Tech on a NEAT GaN substrate had an ideality factor of 2.08, a high breakdown voltage of 1430 V, and Baliga's Figure of Merit of >9.2 GW/cm. These initial results demonstrate the suitability of using NEAT GaN substrates for high-quality MOCVD growth and fabrication of high-power vertical GaN switching devices.
独立式氮化镓（GaN）衬底在功率器件、激光二极管和高功率发光二极管（LED）方面有很高的需求。SixPoint Materials公司已开始通过我们专有的近平衡氨热（NEAT）生长技术生产2英寸GaN衬底。在单次90天的生长过程中，从独立式氢化物气相外延（HVPE）GaN衬底上生长出了11面的GaN晶棒。使用0.3毫米发散狭缝时，这些晶棒在002反射中的平均X射线摇摆曲线半高宽（FWHM）为33±4，在201反射中为44±6。这些晶棒的平均曲率半径为10.16±3.63米。晶棒的质量与籽晶的质量高度相关。在佐治亚理工学院在NEAT GaN衬底上生长的PIN二极管的理想因子为2.08，高击穿电压为1430 V，巴利加优值大于9.2 GW/cm。这些初步结果证明了使用NEAT GaN衬底进行高质量MOCVD生长和制造高功率垂直GaN开关器件的适用性。
