Gao Xian, Pang Guotao, Ni Zhenhua, Chen Rui
Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China.
School of Physics, Southeast University, Nanjing, 211189, People's Republic of China.
Nanoscale Res Lett. 2019 Jun 25;14(1):216. doi: 10.1186/s11671-019-3036-5.
In this report, comparative investigation of photoluminescence (PL) characteristics of CdS nanobelts (NBs) and nanowires (NWs) is presented. At low temperatures, emissions originate from radiative recombination of free exciton A, neutral donor bound exciton, neutral acceptor bound exciton and surface related exciton (SX) are observed and analyzed through power-dependent and temperature-dependent PL measurements. We found that SX emission takes a predominant role in emissions of CdS nanobelts and nanowires. There is a direct correlation between SX emission intensity and surface-to-volume ratio, which is the SX emission intensity is proportional to the superficial area of the nanostructures. At the same time, we found that the exciton-phonon interaction in the CdS NWs sample is weaker than that of CdS NBs sample. Furthermore, lasing action has been observed in CdS NBs sample at room temperature with lasing threshold of 608.13 mW/cm. However, there is no lasing emission in CdS NWs sample. This phenomenon can be explained by the side effects (such as thermal effects) from surface deep level transitions caused the lower damage threshold in CdS NWs. Based on the observations and deductions presented here, SX emission significantly impact on the performance of nanostructures for lasing and light-emitting applications.
在本报告中,对硫化镉纳米带(NBs)和纳米线(NWs)的光致发光(PL)特性进行了对比研究。在低温下,通过功率依赖和温度依赖的PL测量,观察并分析了源于自由激子A、中性施主束缚激子、中性受主束缚激子和表面相关激子(SX)的辐射复合所产生的发射。我们发现,SX发射在硫化镉纳米带和纳米线的发射中起主要作用。SX发射强度与表面积与体积之比直接相关,即SX发射强度与纳米结构的表面积成正比。同时,我们发现硫化镉纳米线样品中的激子 - 声子相互作用比硫化镉纳米带样品中的弱。此外,在室温下在硫化镉纳米带样品中观察到了激光作用,激光阈值为608.13 mW/cm²。然而,硫化镉纳米线样品中没有激光发射。这种现象可以通过表面深能级跃迁产生的副作用(如热效应)导致硫化镉纳米线中较低的损伤阈值来解释。基于此处给出的观察和推论,SX发射对用于激光和发光应用的纳米结构的性能有显著影响。