Yang Tiefeng, Wang Xiao, Zheng Biyuan, Qi Zhaoyang, Ma Chao, Fu Yuhao, Fu Yongping, Hautzinger Matthew P, Jiang Ying, Li Ziwei, Fan Peng, Li Fang, Zheng Weihao, Luo Ziyu, Liu Jie, Yang Bin, Chen Shula, Li Dong, Zhang Lijun, Jin Song, Pan Anlian
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , PR China.
School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , PR China.
ACS Nano. 2019 Jul 23;13(7):7996-8003. doi: 10.1021/acsnano.9b02676. Epub 2019 Jun 24.
Two-dimensional (2D) atomic layered semiconductor (, transition metal dichalcogenides, TMDCs) heterostructures display diverse novel interfacial carrier properties and have potential applications in constructing next generation highly compact electronics and optoelectronics devices. However, the optoelectronic performance of this kind of semiconductor heterostructures has difficulty reaching the expectations of practical applications, due to the intrinsic weak optical absorption of the atomic-thick component layers. Here, combining the extraordinary optoelectronic properties of quantum-confined organic-inorganic hybrid perovskite (PVK), we design an ultrathin PVK/TMDC vertical semiconductor heterostructure configuration and realize the controlled vapor-phase growth of highly crystalline few-nanometer-thick PVK layers on TMDCs monolayers. The achieved ultrathin PVKs show strong thickness-induced quantum confinement effect, and simultaneously form band alignment-engineered heterointerfaces with the underlying TMDCs, resulting in highly efficient interfacial charge separation and transport. Electrical devices constructed with the as-grown ultrathin PVK/WS heterostructures show ambipolar transport originating from -type PVK and -type WS, and exhibit outstanding optoelectronic characteristics, with the optimized response time and photoresponsivity reaching 64 μs and 11174.2 A/W, respectively, both of which are 4 orders of magnitude better than the heterostructures with a thick PVK layer, and also represent the best among all previously reported 2D layered semiconductor heterostructures. This work provides opportunities for 2D vertical semiconductor heterostructures incorporating ultrathin PVK layers in high-performance integrated optoelectronics.
二维（2D）原子层状半导体（即过渡金属二硫属化物，TMDCs）异质结构展现出多样的新型界面载流子特性，在构建下一代高度紧凑的电子和光电器件方面具有潜在应用。然而，由于原子厚度的组成层固有的弱光吸收特性，这类半导体异质结构的光电性能难以达到实际应用的预期。在此，结合量子限域有机-无机杂化钙钛矿（PVK）的优异光电特性，我们设计了一种超薄PVK/TMDC垂直半导体异质结构构型，并实现了在TMDCs单层上气相生长高度结晶的几纳米厚PVK层的可控生长。所制备的超薄PVKs表现出强烈的厚度诱导量子限域效应，同时与下层的TMDCs形成能带排列工程化的异质界面，从而实现高效的界面电荷分离和传输。用生长的超薄PVK/WS异质结构构建的电子器件表现出源自n型PVK和p型WS的双极性传输，并展现出优异的光电特性，优化后的响应时间和光响应率分别达到64 μs和11174.2 A/W，这两者均比具有厚PVK层的异质结构好4个数量级，并且也代表了所有先前报道的二维层状半导体异质结构中的最佳性能。这项工作为在高性能集成光电子学中纳入超薄PVK层的二维垂直半导体异质结构提供了机会。
