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用于暖白光发光二极管的Lu(MgAl)(AlSi)O:Ce中第二球多面体畸变诱导的发光加宽和红移

Second-Sphere Polyhedron-Distortion-Induced Broadened and Red-Shifted Emission in Lu(MgAl)(AlSi)O:Ce for Warm WLED.

作者信息

Zhou Yunan, Zhuang Weidong, Hu Yunsheng, Liu Ronghui, Xu Huibing, Liu Yuanhong, Li Yanfeng

机构信息

National Engineering Research Center for Rare Earth Materials, General Research Institute for Nonferrous Metals, and Grirem Advanced Materials Co., Ltd. , Beijing 100088 , People's Republic of China.

出版信息

Inorg Chem. 2019 Jul 15;58(14):9108-9117. doi: 10.1021/acs.inorgchem.9b00676. Epub 2019 Jun 27.

Abstract

Orange-yellow phosphors with extended broadband emission are highly desirable for warmer white-light-emitting diodes (WLED) with a higher color-rendering index. Targeted phosphors Ce-doped Lu(MgAl)(AlSi)O ( = 0, 0.25, 0.50, 0.75, and 1.00) were developed by chemical composition modification for luminescent tuning from green to orange-yellow with spectral broadening. The correlation between structure evolution and luminescent properties was elucidated by the local structure, fluorescence lifetime, and Eu luminescence as a structural probe. The polyhedron distortion in the second-sphere coordination leads to the site differentiation and symmetry degradation of Ce with the accommodation of (MgSi) pairs, comprehensively resulting in the red shift (540 → 564 nm) and broadening in emission spectra. The WLED fabrication results demonstrate that the red shift and broadening in the emission of Lu(MgAl)(AlSi)O:Ce make it more suitable for the single-phosphor converted warm WLED.

摘要

具有扩展宽带发射的橙黄色磷光体对于具有更高显色指数的暖白色发光二极管(WLED)非常理想。通过化学成分改性开发了目标磷光体Ce掺杂的Lu(MgAl)(AlSi)O( = 0、0.25、0.50、0.75和1.00),用于从绿色到橙黄色的发光调谐以及光谱展宽。通过局部结构、荧光寿命和作为结构探针的Eu发光阐明了结构演变与发光特性之间的相关性。第二球配位中的多面体畸变导致Ce的位点分化和对称性降低,并伴随着(MgSi)对的容纳,综合导致发射光谱的红移(540 → 564 nm)和展宽。WLED制造结果表明,Lu(MgAl)(AlSi)O:Ce发射的红移和展宽使其更适合单磷光体转换的暖WLED。

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