Du Mao, Li Dongling, Liu Yufei
Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China.
Centre for Intelligent Sensing Technology, College of Optoelectronic Engineering, Chongqing University, Chongqing 400030, China.
Micromachines (Basel). 2019 Jul 2;10(7):445. doi: 10.3390/mi10070445.
This paper presents a detection method for characterizing the bonded interface of O plasma activated silicon wafer direct bonding. The images, obtained by infrared imaging system, were analyzed by the software based on spatial domain and morphology methods. The spatial domain processing methods, including median filtering and Laplace operator, were applied to achieve de-noising and contrast enhancement. With optimized parameters of sharpening operator patterns, disk size, binarization threshold, morphological parameter A and B, the void contours were clear and convenient for segmentation, and the bonding rate was accurately calculated. Furthermore, the void characteristics with different sizes and distributions were also analyzed, and the detailed statistics of the void's number and size are given. Moreover, the orthogonal experiment was designed and analyzed, indicating that O flow has the greatest influence on the bonding rate in comparison with activated time and power. With the optimized process parameters of activated power of 150 W, O flow of 100 sccm and time of 120 s, the testing results show that the bonding rate can reach 94.51% and the bonding strength is 12.32 MPa.
本文提出了一种用于表征氧等离子体活化硅片直接键合的键合界面的检测方法。通过红外成像系统获得的图像，采用基于空间域和形态学方法的软件进行分析。应用包括中值滤波和拉普拉斯算子在内的空间域处理方法，实现去噪和对比度增强。通过优化锐化算子模式、圆盘尺寸、二值化阈值、形态学参数A和B等参数，空洞轮廓清晰，便于分割，并准确计算键合率。此外，还分析了不同尺寸和分布的空洞特征，并给出了空洞数量和尺寸的详细统计数据。此外，设计并分析了正交实验，结果表明与活化时间和功率相比，氧流量对键合率的影响最大。在活化功率为150W、氧流量为100sccm、时间为120s的优化工艺参数下，测试结果表明键合率可达94.51%，键合强度为12.32MPa。
