Jin Qi, Yuan Julong, Zhou Jianxing
Ultra-Precision Machining Centre, Zhejiang University of Technology, Hangzhou 310014, China.
Xinchang Research Institute of ZJUT, Zhejiang University of Technology, Xinchang, Shaoxing 312500, China.
Micromachines (Basel). 2023 Jun 29;14(7):1331. doi: 10.3390/mi14071331.
Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and damage-free method is required to meet the processing requirements. In this study, atmospheric plasma processing was used to conduct point-residence experiments on silicon carbide wafers by varying process parameters such as Ar, CF, and O flow rate, as well as processing power and the distance between the plasma torch and the workpiece. We investigate the effects of these on the surface processing function of atmospheric plasma etching and technique for surface modification of silicon carbide wafers, evaluating the material removal rates. Then, according to the experimentally derived influence law, suitable parameter ranges were selected, and orthogonal experiments were designed to determine the optimal processing parameters that would enable rapid and uniform removal of the wafer surface. The results indicate that the volume removal rate of the plasma on the silicon carbide wafer achieves its maximum when the input power is 550 W, the processing distance between the plasma torch and workpiece is 3.5 mm, and when the Ar, CF, and O flow rates are 15 SLM, 70 SCCM, and 20 SCCM, respectively.
碳化硅晶圆是制造半导体器件的理想衬底材料，具有巨大的未来潜力。然而，其超硬度和显著的化学惰性给晶圆的表面加工带来了重大挑战，需要一种高效且无损伤的方法来满足加工要求。在本研究中，采用大气等离子体处理，通过改变诸如氩气、CF和氧气流量、处理功率以及等离子体炬与工件之间的距离等工艺参数，对碳化硅晶圆进行驻点实验。我们研究了这些参数对大气等离子体蚀刻的表面加工功能以及碳化硅晶圆表面改性技术的影响，评估材料去除率。然后，根据实验得出的影响规律，选择合适的参数范围，并设计正交实验以确定能够使晶圆表面快速均匀去除的最佳加工参数。结果表明，当输入功率为550W、等离子体炬与工件之间的加工距离为3.5mm，且氩气、CF和氧气流量分别为15SLM、70SCCM和20SCCM时，等离子体对碳化硅晶圆的体积去除率达到最大值。
