Liu Zhong-Qiang, Dong Jichen, Ding Feng
Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea and College of Physics and Engineering, Qufu Normal University, Qufu 273165, P. R. China.
Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea.
Nanoscale. 2019 Jul 18;11(28):13366-13376. doi: 10.1039/c9nr02404b.
To understand the nucleation process in the growth of hexagonal boron nitride (h-BN) on transition metal substrates by chemical vapor deposition (CVD), the energy of formation and stability of h-BN clusters of different geometries on a pristine Cu(111) surface were systematically investigated using density functional theory calculations. We find that unlike carbon clusters, h-BN clusters on Cu supports can undergo two possible transformations of the minimum-energy structure at a critical size of 13. Different from freestanding h-BN clusters, on a Cu(111) surface, h-BN chains are more stable than h-BN rings and thus dominate the minimum-energy structure for cluster sizes lower than the critical size. Thus, depending on the experimental conditions of CVD, one-dimensional Bn-1Nn (N-rich environment) or BnNn-1 (B-rich) chains are first created, and they transform to two-dimensional sp2 networks or h-BN islands, but for a BnNn chain, the transformation to a two-dimensional sp2 network h-BN island does not occur. In contrast to carbon islands where pentagons are readily formed, odd-membered rings are extremely rare in h-BN islands, where the transformation to the most stable structure occurs through a combination of trapeziums and hexagons at the edges, so as to avoid B-B and N-N bonds. Moreover, on a Cu(111) surface, trapeziums are destabilized when the four edges are connected to other hexagons because of additional curvature energy, thus favoring the nucleation of planar nuclei. A deep insight into h-BN cluster formation on a Cu support is vital to understanding the growth mechanism of h-BN on a transition metal surface in CVD experiments to further improve experimental designs in the CVD growth of h-BN.
为了理解通过化学气相沉积(CVD)在过渡金属衬底上生长六方氮化硼(h-BN)的成核过程,利用密度泛函理论计算系统地研究了原始Cu(111)表面上不同几何形状的h-BN团簇的形成能和稳定性。我们发现,与碳团簇不同,Cu载体上的h-BN团簇在临界尺寸为13时可以经历两种可能的最低能量结构转变。与独立的h-BN团簇不同,在Cu(111)表面上,h-BN链比h-BN环更稳定,因此在团簇尺寸低于临界尺寸时主导最低能量结构。因此,根据CVD的实验条件,首先生成一维Bn-1Nn(富氮环境)或BnNn-1(富硼)链,它们会转变为二维sp2网络或h-BN岛,但对于BnNn链,不会发生向二维sp2网络h-BN岛的转变。与容易形成五边形的碳岛相反,h-BN岛中奇数元环极其罕见,在h-BN岛中,向最稳定结构的转变是通过边缘处梯形和六边形的组合发生的,以避免B-B和N-N键。此外,在Cu(111)表面上,当四个边缘与其他六边形相连时,梯形会因额外的曲率能量而不稳定,从而有利于平面核的成核。深入了解Cu载体上h-BN团簇的形成对于理解CVD实验中h-BN在过渡金属表面的生长机制至关重要,有助于进一步改进h-BN CVD生长的实验设计。