School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China. Key Laboratory of Micro-systems and Micro-structures, Manufacturing of Ministry of Education, Harbin Institute of Technology Harbin, People's Republic of China.
Nanotechnology. 2019 Jun 14;30(24):245706. doi: 10.1088/1361-6528/ab0d3d. Epub 2019 Mar 6.
Two dimensional (2D) hexagonal boron nitride (h-BN) has attracted extensive attention due to its high thermal and chemical stability, excellent dielectric characteristic, and unique optical properties. However, the chemical vapor deposition synthesis of 2D h-BN is not fully explored, such as morphology regulation and size control. Here we demonstrate the growth of 2D h-BN single domains on Cu/Ni alloy via atmospheric chemical vapor deposition (APCVD). We discover that the shape of the as-grown h-BN single domains can be controlled from triangles, hexagons, to circles by adjusting the Ni content of the Cu/Ni substrates. Moreover, we find out that increasing the nickel content can suppress the nucleation density while the average domain size is accordingly improved. The grown single-crystalline h-BN demonstrates ultralow dark current about 0.9 pA and outstanding ultraviolet response with the responsivity up to 5.45 mAW. The response time are 376 and 198 ms. Our work sheds light on the controllable synthesis of 2D h-BN and promotes its applications in high ultraviolet detection.
二维（2D）六方氮化硼（h-BN）因其高热和化学稳定性、优异的介电特性以及独特的光学性质而受到广泛关注。然而，二维 h-BN 的化学气相沉积合成尚未得到充分探索，例如形态调控和尺寸控制。在这里，我们通过常压化学气相沉积（APCVD）在 Cu/Ni 合金上展示了二维 h-BN 单畴的生长。我们发现，通过调整 Cu/Ni 衬底中的镍含量，可以将所得 h-BN 单畴的形状从三角形、六边形控制到圆形。此外，我们发现增加镍含量可以抑制成核密度，同时平均畴尺寸相应提高。生长的单晶 h-BN 表现出超低暗电流约 0.9 pA 和出色的紫外响应，响应率高达 5.45 mAW。响应时间分别为 376 和 198 ms。我们的工作为二维 h-BN 的可控合成提供了启示，并推动了其在高紫外探测中的应用。
