Band-Offset Analysis of Atomic Layer Deposition LaO on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth.

In this paper, we measured band offsets for LaO prepared by atomic layer deposition on GaAs(111), (110), and (100) surfaces. LaO grows epitaxially on GaAs(111) with very low interfacial defect density and exhibits a band offset that is predicted for defect-free interfaces by the metal-induced gap state theory. On the other hand, the polycrystalline LaO deposited on GaAs(110) and (100) shows band offsets close to the values predicted for Fermi-level pinning. In this way, band offsets can qualitatively estimate interfacial defect levels.