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Structural, vibrational and electrical properties of type-II Dirac semimetal PtSe under high pressure.

作者信息

An Chao, Chen Xuliang, Zhou Yonghui, Zhou Ying, Zhang Bowen, Chen Chunhua, Yuan Yifang, Zhang Ranran, Zhang Lili, Zhu Xiangde, Yang Zhaorong

机构信息

Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China. Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China.

出版信息

J Phys Condens Matter. 2019 Oct 16;31(41):415402. doi: 10.1088/1361-648X/ab315e. Epub 2019 Jul 11.

Abstract

We present a high-pressure study of type-II Dirac semimetal PtSe single crystals through synchrotron x-ray diffraction (XRD), electrical transport and Raman scattering measurements in diamond anvil cells with pressures up to 36.1-42.3 GPa, from which two critical pressure points associated with unusual electron-phonon coupling are unraveled. We show that both resistance and phonon linewidth of Raman modes display anomalies at the first critical pressure of P ~ 10 GPa, in accordance with a scenario of pressure-induced disappearance/appearance of type-II/type-I Dirac points around P predicted previously. The second critical pressure P ~ 20 GPa may correspond to a structural crossover of PtSe from quasi-2D lattice to 3D network, which is revealed via detailed analysis of the structural parameters extracted from XRD refinement, Raman modes shifts as well as parameters from fitting of the low-temperature resistance. Our results demonstrate great tunability of PtSe via strain engineering, thanks to the single p-orbital manifold derived electronic states that are susceptible to out-of-plane and in-plane distances.

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