压力诱导的WSe中的同结构相变和金属化
Pressure-induced iso-structural phase transition and metallization in WSe.
作者信息
Wang Xuefei, Chen Xuliang, Zhou Yonghui, Park Changyong, An Chao, Zhou Ying, Zhang Ranran, Gu Chuanchuan, Yang Wenge, Yang Zhaorong
机构信息
Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, CAS and University of Science and Technology of China, Hefei 230031, China.
High Pressure Collaborative Access Team, Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439, USA.
出版信息
Sci Rep. 2017 May 4;7:46694. doi: 10.1038/srep46694.
We present in situ high-pressure synchrotron X-ray diffraction (XRD) and Raman spectroscopy study, and electrical transport measurement of single crystal WSe in diamond anvil cells with pressures up to 54.0-62.8 GPa. The XRD and Raman results show that the phase undergoes a pressure-induced iso-structural transition via layer sliding, beginning at 28.5 GPa and not being completed up to around 60 GPa. The Raman data also reveals a dominant role of the in-plane strain over the out-of plane compression in helping achieve the transition. Consistently, the electrical transport experiments down to 1.8 K reveals a pressure-induced metallization for WSe through a broad pressure range of 28.2-61.7 GPa, where a mixed semiconducting and metallic feature is observed due to the coexisting low- and high-pressure structures.
我们展示了原位高压同步辐射X射线衍射（XRD）和拉曼光谱研究，以及在金刚石对顶砧中对单晶WSe进行的电输运测量，压力高达54.0 - 62.8 GPa。XRD和拉曼结果表明，该相通过层间滑动经历压力诱导的同结构转变，起始压力为28.5 GPa，直至约60 GPa时仍未完全完成。拉曼数据还表明，面内应变在促成转变方面比面外压缩起主导作用。与此一致，在低至1.8 K的电输运实验中，WSe在28.2 - 61.7 GPa的宽压力范围内出现压力诱导的金属化，在此范围内，由于低压和高压结构共存，观察到混合的半导体和金属特性。
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