Key Laboratory of Environmental Optics and Technology, and Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
Department of Chemistry, University of Science and Technology of China, Hefei, 230026, P. R. China.
Small. 2019 Aug;15(35):e1902433. doi: 10.1002/smll.201902433. Epub 2019 Jul 15.
The measurement of ultralow concentrations of heavy metal ions (HMIs) in blood is challenging. A new strategy for the determination of mercury ions (Hg ) based on an oriented ZnO nanobelt (ZnO-NB) film solution-gated field-effect transistor (FET) chip is adopted. The FET chips are fabricated with ZnO-NB film channels with different orientations utilizing the Langmuir-Blodgett (L-B) assembly technique. The combined simulation and I-V behavior results show that the nanodevice with ZnO-NBs parallel to the channel has exceptional performance. The sensing capability of the oriented ZnO-NB film FET chips corresponds to an ultralow minimum detectable level (MDL) of 100 × 10 m in deionized water due to the change in the electrical double layer (EDL) arising from the synergism of the field-induced effect and the specific binding of Hg to the thiol groups (-SH) on the film surface. Moreover, the prepared FET chips present excellent selectivity toward Hg , excellent repeatability, and a rapid response time (less than 1 s) for various Hg concentrations. The sensing performance corresponds to a low MDL of 10 × 10 m in real samples of a drop of blood.
测量血液中痕量重金属离子(HMIs)具有挑战性。采用基于取向氧化锌纳米带(ZnO-NB)薄膜溶液栅场效应晶体管(FET)芯片的汞离子(Hg )测定新策略。FET 芯片采用 Langmuir-Blodgett(L-B)组装技术制造具有不同取向的 ZnO-NB 薄膜沟道。组合模拟和 I-V 行为结果表明,与沟道平行的 ZnO-NBs 纳米器件具有出色的性能。由于电场诱导效应和 Hg 与薄膜表面上的巯基(-SH)的特异性结合引起的双电层(EDL)的变化,取向 ZnO-NB 薄膜 FET 芯片的传感能力对应于在去离子水中超低的最小可检测水平(MDL)为 100×10 m。此外,制备的 FET 芯片对 Hg 具有优异的选择性、出色的重复性和对各种 Hg 浓度的快速响应时间(小于 1 s)。在一滴血液的实际样品中,传感性能对应于 10×10 m 的低 MDL。