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通过电子束图像反转光刻技术形成的用于具有高纵横比纳米间隙的等离子体中红外谐振器的纳米桥。

Nanobridges formed through electron beam image reversal lithography for plasmonic mid-infrared resonators with high aspect ratio nanogaps.

作者信息

Tobing Landobasa Y M, Mueller Aaron D, Tong Jinchao, Zhang Dao Hua

机构信息

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore.

出版信息

Nanotechnology. 2019 Oct 18;30(42):425302. doi: 10.1088/1361-6528/ab32c5. Epub 2019 Jul 17.

Abstract

We present the emergence of nanobridge networks through a nanofabrication technique based on image-reversal electron beam lithography and demonstrate plasmonic structures with high aspect ratio sub-20 nm gaps capable of strong intensity enhancement in the mid-infrared range. The proposed technique, which employs the engineering of natural formations of nanobridges in predefined templates, could serve as an alternative path for realizing mid-infrared plasmonic resonators with potential applications in surface plasmon polariton-based integrated optics, and enhancement of light-matter interaction for high efficiency photodetection and nanoscale light emitters.

摘要

我们展示了通过基于图像反转电子束光刻的纳米制造技术形成的纳米桥网络,并展示了具有高纵横比且间隙小于20 nm的等离子体结构,该结构能够在中红外范围内实现高强度增强。所提出的技术利用在预定义模板中对纳米桥自然形成的工程设计,可作为实现中红外等离子体谐振器的替代途径,在基于表面等离子体激元的集成光学以及增强光与物质相互作用以实现高效光电探测和纳米级发光器方面具有潜在应用。

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