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基于磁性纳米线利用激光辅助工艺制造微波器件。

Fabrication of Microwave Devices Based on Magnetic Nanowires Using a Laser-Assisted Process.

作者信息

Van Kerckhoven Vivien, Piraux Luc, Huynen Isabelle

机构信息

IMCN Institute, Université catholique de Louvain, 1 place Croix du Sud, 1348 Louvain-la-Neuve, Belgium.

ICTEAM Institute, Université catholique de Louvain, 3 place du Levant, 1348 Louvain-la-Neuve, Belgium.

出版信息

Micromachines (Basel). 2019 Jul 16;10(7):475. doi: 10.3390/mi10070475.

Abstract

This paper compares two laser-assisted processes developed by the authors for the fabrication of microwave devices based on nanowire arrays loaded inside porous alumina templates. Pros and cons of each process are discussed in terms of accuracy, reproducibility and ease of fabrication. A comparison with lithography technique is also provided. The efficiency of the laser-assisted process is demonstrated through the realization of substrate integrated waveguide (SIW) based devices. A Nanowired SIW line is firstly presented. It operates between 8.5 and 17 GHz, corresponding to the first and second cut-off frequency of the waveguide, respectively. Next, a Nanowired SIW isolator is demonstrated. It shows a nonreciprocal isolation of 12 dB (corresponding to 4.4 dB/cm), observed in absence of a DC magnetic field, and achieved through an adequate positioning of ferromagnetic nanowires inside the waveguide cavity.

摘要

本文比较了作者开发的两种用于制造基于负载在多孔氧化铝模板内的纳米线阵列的微波器件的激光辅助工艺。从精度、可重复性和制造简易性方面讨论了每种工艺的优缺点。还提供了与光刻技术的比较。通过实现基于衬底集成波导(SIW)的器件,证明了激光辅助工艺的效率。首先介绍了纳米线SIW线。它在8.5至17 GHz之间工作,分别对应于波导的第一和第二截止频率。接下来,展示了纳米线SIW隔离器。在没有直流磁场的情况下观察到它具有12 dB(对应于4.4 dB/cm)的非互易隔离,这是通过在波导腔内适当定位铁磁纳米线实现的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64bb/6680728/be5ed25cdb44/micromachines-10-00475-g001.jpg

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